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| 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features http://onsemi.com * Current-Gain - Bandwidth-Product @ IC = 1.0 Adc * * fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area - Rated to 60 V and 120 V, Respectively Pb-Free Packages are Available* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS - 115, 180 WATTS MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage 2N3055A MJ15015, MJ15016 Collector-Base Voltage 2N3055A MJ15015, MJ15016 Collector-Emitter Voltage Base Reversed Biased 2N3055A MJ15015, MJ15016 Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C 2N3055A Total Device Dissipation @ TC = 25_C Derate above 25_C MJ15015, MJ15016 Operating and Storage Junction Temperature Range TJ, Tstg VCEV 100 200 VEBO IC IB PD 7.0 15 7.0 115 0.65 180 1.03 -65 to +200 _C 2N3055A = Device Code MJ1501x = Device Code x = 5 or 6 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin Vdc Adc Adc W W/_C 2N3055AG AYWW MEX MJ1501xG AYWW MEX VCBO 100 200 Vdc Symbol VCEO 60 120 Vdc Value Unit Vdc TO-204AA (TO-3) CASE 1-07 STYLE 1 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.52 Max 0.98 Unit _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A) *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 April, 2006 - Rev. 6 Publication Order Number: 2N3055A/D II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIII IIIIIIIIIIIII IIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 3. Indicates JEDEC Registered Data. (2N3055A) SWITCHING CHARACTERISTICS (2N3055A only) (Note 3) DYNAMIC CHARACTERISTICS (Note 3) ON CHARACTERISTICS (Note 2 and 3) SECOND BREAKDOWN (Note 3) OFF CHARACTERISTICS (Note 2) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) RESISTIVE LOAD Fall Time Storage Time Rise Time Delay Time Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non-repetitive) 2N3055A MJ15015, MJ15016 (VCE = 60 Vdc) Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (Note 3) (VCEV = Rated Value, VBE(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) Collector-Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Characteristic (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, tp = 25 ms Duty Cycle v 2% http://onsemi.com 2N3055A, MJ15015 MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEV ICEV Cob hFE IS/b fT td ts tr tf 1.95 3.0 Min 60 120 10 20 5.0 0.8 2.2 0.7 60 - - - - - - - - - - - - - - - Max 600 6.0 3.0 4.0 0.5 6.0 18 1.8 1.1 3.0 5.0 5.0 0.2 5.0 1.0 0.7 0.1 30 6.0 70 70 - - - - - mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc pF ms ms ms ms - 2 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) PD(AV), AVERAGE POWER DISSIPATION (W) 200 150 MJ15015 MJ15016 100 50 2N3055A 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating 200 100 hFE , DC CURRENT GAIN 70 50 30 20 10 7 5 3 2 VCE = 4.0 V 25C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 IC = 1 A 4A 8A TJ = 25C -55 C 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 Figure 2. DC Current Gain Figure 3. Collector Saturation Region 3.5 3 V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.5 0.7 1 2 3 5 7 10 20 TC = 25C BANDWIDTH PRODUCT (MHz) 10 5.0 MJ15016 2.0 2N3055A MJ15015 1.0 f T, CURRENT-GAIN 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. "On" Voltages Figure 5. Current-Gain -- Bandwidth Product http://onsemi.com 3 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) 10 7 5 3 t, TIME ( s) 2 tr 1 0.7 0.5 0.3 0.2 -5 V 0.1 0.2 0.3 td 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 VCC = 30 V IC/IB = 10 TJ = 25C VCC +30 V 7.5 W 30 W -11 V tr, tf 10 ns DUTY CYCLE = 1.0% 1N6073 SCOPE 25 ms +13 V 0 Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. Turn-On Time 10 7 5 2 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 15 tf ts C, CAPACITANCE (pF) 3 t, TIME ( s) 400 TJ = 25C 200 Cib 2N3055A MJ15015 MJ15016 100 50 30 20 1.0 2.0 Cob 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) 500 1000 Figure 8. Turn-Off Times Figure 9. Capacitances http://onsemi.com 4 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) COLLECTOR CUT-OFF REGION NPN 10,000 VCE = 30 V IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 1000 100 TJ = 150C 10 100C 1.0 0.1 0.01 +0.2 REVERSE 25C +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) -0.5 0.001 -0.2 -0.1 +0.4 0 +0.1 +0.2 +0.3 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.5 IC = ICES FORWARD 100 10 1.0 100C 0.1 REVERSE 0.01 25C IC = ICES FORWARD TJ = 150C 1000 VCE = 30 V PNP Figure 10. 2N3055A, MJ15015 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) 30 ms 10 100 ms 5 1 ms 20 Figure 11. MJ15016 0.1 ms 10 5.0 1.0 ms 2.0 1.0 0.5 100 ms 2 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 ms dc BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 dc 120 1 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.2 20 30 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area 2N3055A Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ORDERING INFORMATION Device 2N3055A 2N3055AG MJ15015 MJ15015G MJ15016 MJ15016G The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. Package TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray http://onsemi.com 5 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N3055A/D |
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